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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-593956
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.59395
Zusammenfassung
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope concentration depth profiles in a SiGe/28Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry down to their ...
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