Egorova, Svetlana G. ; Chernichkin, Vladimir I. ; Dudnik, Anna O. ; Kasiyan, Vladimir A. ; Chernyak, Leonid ; Danilov, Sergey N. ; Ryabova, Ludmila I. ; Khokhlov, Dmitry R.
Alternative Links zum Volltext:DOIVerlag
| Dokumentenart: | Artikel |
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| Titel eines Journals oder einer Zeitschrift: | IEEE Transactions on Terahertz Science and Technology |
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| Verlag: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
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| Ort der Veröffentlichung: | PISCATAWAY |
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| Band: | 5 |
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| Nummer des Zeitschriftenheftes oder des Kapitels: | 4 |
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| Seitenbereich: | S. 659-664 |
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| Datum: | 2015 |
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| Institutionen: | Physik > Institut für Experimentelle und Angewandte Physik > Professor Ganichev > Arbeitsgruppe Sergey Ganichev |
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| Identifikationsnummer: | | Wert | Typ |
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| 10.1109/TTHZ.2015.2436712 | DOI |
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| Stichwörter / Keywords: | TRANSPORT-PROPERTIES; PHYSICAL-PROPERTIES; FILMS; PHOTOCONDUCTIVITY; IONIZATION; IV-VI semiconductor materials; photoelectromagnetic effect; surface conductivity; terahertz; topological insulators (TIs) |
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| Dewey-Dezimal-Klassifikation: | 500 Naturwissenschaften und Mathematik > 530 Physik |
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| Status: | Veröffentlicht |
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| Begutachtet: | Ja, diese Version wurde begutachtet |
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| An der Universität Regensburg entstanden: | Ja |
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| Dokumenten-ID: | 60297 |
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Zusammenfassung
We report on the influence of oxidation on features of surface electron states in PbSe films-materials belonging to the family of topological crystalline insulators Pb1-xSnxSe. These states are detected through observation of the photoelectromagnetic effect induced by terahertz laser pulses. It is demonstrated that highly conductive surface electron states in PbSe are inherent to the ...
Zusammenfassung
We report on the influence of oxidation on features of surface electron states in PbSe films-materials belonging to the family of topological crystalline insulators Pb1-xSnxSe. These states are detected through observation of the photoelectromagnetic effect induced by terahertz laser pulses. It is demonstrated that highly conductive surface electron states in PbSe are inherent to the semiconductor itself and are not related to the material oxidation. This allows excluding surface states induced by oxidation as a reason for high surface conductivity in topological crystalline insulators based on Pb1-xSnxSe.
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