Zusammenfassung
In order to deposit semipolar GaN layers on foreign substrates while still starting the growth along the c-direction, we have etched trenches into r-plane and n-plane sapphire wafers. The GaN MOVPE growth then starts from c-plane-like sidewalls of these trenches, eventually leading to semipolar $\{ 11{\bar {2}}2\} $ and $\{ 10{\bar {1}}1\} $ surfaces with very good properties. GaInN quantum wells ...
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