Zusammenfassung
We show that a fast electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells is governed by the presence of excitons at low temperatures and intermediate excitation densities. The electron loses its spin orientation within an exciton due to the long-range part of the exciton anisotropic spin exchange interaction and unveils excitonic signatures within the many particle ...
Zusammenfassung
We show that a fast electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells is governed by the presence of excitons at low temperatures and intermediate excitation densities. The electron loses its spin orientation within an exciton due to the long-range part of the exciton anisotropic spin exchange interaction and unveils excitonic signatures within the many particle electron-hole system. The temperature-dependent time-and polarization-resolved photoluminescence measurements span five decades of carrier density, comprise the transition from localized excitons over quasi-free excitons to an electron-hole plasma, and reveal strong excitonic signatures even at relatively high densities and temperatures. Copyright (C) EPLA, 2011
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