Zusammenfassung
In a high-mobility two-dimensional electron gas (2DEG) in a GaAs/Al0.3Ga0.7As quantum well we observe a strong magnetoresistance. In lowering the electron density, the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes when increasing the temperature. An additional density-dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.
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