Transient memory effect in the photoluminescence of InGaN single quantum wells
Feldmeier, Christian, Abiko, Masayoshi, Schwarz, Ulrich T.
, Kawakami, Yoichi and Micheletto, Ruggero
(2009)
Transient memory effect in the photoluminescence of InGaN single quantum wells.
Optics Express 17 (25), p. 22855.
Date of publication of this fulltext: 19 Dec 2024 11:58
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| Item type | Article | ||||
| Journal or Publication Title | Optics Express | ||||
| Publisher: | OPTICAL SOC AMER | ||||
|---|---|---|---|---|---|
| Place of Publication: | WASHINGTON | ||||
| Volume: | 17 | ||||
| Number of Issue or Book Chapter: | 25 | ||||
| Page Range: | p. 22855 | ||||
| Date | 2009 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Ulrich Schwarz Chemistry and Pharmacy > Institut für Organische Chemie | ||||
| Identification Number |
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| Keywords | III NITRIDE SEMICONDUCTORS; OPTICAL METASTABILITY; GAN; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics 500 Science > 540 Chemistry & allied sciences | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 66679 |
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