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Nikolaev, S. N. ; Aronzon, B. A. ; Ryl’kov, V. V. ; Tugushev, V. V. ; Demidov, E. S. ; Levchuk, S. A. ; Lesnikov, V. P. ; Podol’skii, V. V. ; Gareev, R. R.

Anomalous Hall effect in highly Mn-Doped silicon films

Nikolaev, S. N., Aronzon, B. A., Ryl’kov, V. V., Tugushev, V. V., Demidov, E. S., Levchuk, S. A., Lesnikov, V. P., Podol’skii, V. V. and Gareev, R. R. (2009) Anomalous Hall effect in highly Mn-Doped silicon films. JETP Letters 89 (12), pp. 603-608.

Date of publication of this fulltext: 19 Dec 2024 12:04
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Item typeArticle
Journal or Publication TitleJETP Letters
Publisher:MAIK NAUKA/INTERPERIODICA/SPRINGER
Place of Publication:NEW YORK
Volume:89
Number of Issue or Book Chapter:12
Page Range:pp. 603-608
Date2009
InstitutionsPhysics > Institute of Experimental and Applied Physics
Identification Number
ValueType
10.1134/S0021364009120030DOI
KeywordsSEMICONDUCTORS; MN4SI7;
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedYes, this version has been refereed
Created at the University of RegensburgYes
Item ID67009

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