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Anomalous Hall effect in highly Mn-Doped silicon films
Nikolaev, S. N., Aronzon, B. A., Ryl’kov, V. V., Tugushev, V. V., Demidov, E. S., Levchuk, S. A., Lesnikov, V. P., Podol’skii, V. V. and Gareev, R. R. (2009) Anomalous Hall effect in highly Mn-Doped silicon films. JETP Letters 89 (12), pp. 603-608.Date of publication of this fulltext: 19 Dec 2024 12:04
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| Item type | Article | ||||
| Journal or Publication Title | JETP Letters | ||||
| Publisher: | MAIK NAUKA/INTERPERIODICA/SPRINGER | ||||
|---|---|---|---|---|---|
| Place of Publication: | NEW YORK | ||||
| Volume: | 89 | ||||
| Number of Issue or Book Chapter: | 12 | ||||
| Page Range: | pp. 603-608 | ||||
| Date | 2009 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics | ||||
| Identification Number |
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| Keywords | SEMICONDUCTORS; MN4SI7; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 67009 |
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