Zusammenfassung
We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well, indirect excitons are trapped at the perimeter of a SiO(2) area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the ...
Zusammenfassung
We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well, indirect excitons are trapped at the perimeter of a SiO(2) area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trapping potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding 10 keV/cm(2).
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