Abstract
The authors demonstrate the usage of magnetic fringe fields from nanoscale ferromagnets to locally control the spin degree of freedom in a semiconductor. Fringe fields stemming from Fe/Tb multilayer ferromagnets induce a local, remanent out-of-plane magnetization in a ZnCdMnSe dilute magnetic semiconductor quantum well, which in turn aligns the spin of photogenerated carriers via sp-d exchange ...
Abstract
The authors demonstrate the usage of magnetic fringe fields from nanoscale ferromagnets to locally control the spin degree of freedom in a semiconductor. Fringe fields stemming from Fe/Tb multilayer ferromagnets induce a local, remanent out-of-plane magnetization in a ZnCdMnSe dilute magnetic semiconductor quantum well, which in turn aligns the spin of photogenerated carriers via sp-d exchange interaction. The authors achieve a local exciton spin polarization of up to +/- 12% at 4 K without the need of an external magnetic field. The spin polarization can be controlled in sign and magnitude via the magnetization of the ferromagnet and is observable up to T=80 K.
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