Zusammenfassung
Multiple GaInN quantum wells (QWs) were grown on facets with reduced piezoelectric fields (PFs) of selectively grown GaN stripes oriented along the [1 (1) over bar 00] and [11 (2) over bar0] directions by metalorganic vapor phase epitaxy. We found a higher normalized growth rate for the GaInN QWs on the {1 (1) over bar 01} facets compared to the {11 (2) over bar2} facets and the planar grown ...
Zusammenfassung
Multiple GaInN quantum wells (QWs) were grown on facets with reduced piezoelectric fields (PFs) of selectively grown GaN stripes oriented along the [1 (1) over bar 00] and [11 (2) over bar0] directions by metalorganic vapor phase epitaxy. We found a higher normalized growth rate for the GaInN QWs on the {1 (1) over bar 01} facets compared to the {11 (2) over bar2} facets and the planar grown reference sample on unstructured template. The different luminescence wavelengths observed for the QWs on these different facets can partly be explained by the reduced PFs, but additionally indicate that the In incorporation efficiency depends on the facet type. On stripes with trapezoidal cross section, we found strong interfacet migration of In and Ga changing the local thickness and composition significantly. (C) 2005 American Institute of Physics.
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