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Influence of the incident angle of energetic carbon ions on the properties of tetrahedral amorphous carbon (ta-C) films

Liu, Dongping ; Benstetter, Günther ; Lodermeier, Edgar ; Vancea, Johann



Abstract

Tetrahedral amorphous carbon (ta-C) films have been grown on Ar+-beam-cleaned silicon substrates by changing the incident angle of energetic carbon ions produced in the plasma of pulsed cathodic vacuum arc discharge. Their surface roughness, deposition rate, composition, and mechanical and frictional properties as a function of the incident angle of energetic carbon ions were reported. The ...

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