Abstract
A GaAs surface layer of 10 nm thickness was grown on the cleaved edge of an In0.1Al0.9As/Al0.33Ga0.67As multilayer in order to induce a lateral periodic strain modulation. We apply surface sensitive grazing incidence x-ray diffraction to distinguish between compositional/morphological and purely strain induced modulations. The experimentally determined strain profile is confirmed by ...
Abstract
A GaAs surface layer of 10 nm thickness was grown on the cleaved edge of an In0.1Al0.9As/Al0.33Ga0.67As multilayer in order to induce a lateral periodic strain modulation. We apply surface sensitive grazing incidence x-ray diffraction to distinguish between compositional/morphological and purely strain induced modulations. The experimentally determined strain profile is confirmed by finite-element model calculations. The GaAs layer is found to be purely strain modulated with an average lattice parameter change of (0.8+/-0.1)% with respect to relaxed GaAs. (C) 2003 American Institute of Physics.
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