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Ni reactions with surfaces: dependence of gettering efficiencies for Ni on crystal-growth conditions, back-side-gettering techniques, oxygen precipitates and thermal treatments

Hölzl, R. ; Fabry, L. ; Range, K.-J.



Zusammenfassung

We have pet-formed measurements on the gettering efficiencies for Ni in different silicon wafers. Gettering efficiencies were measured of wafers grown by different crystal-growth techniques, such as Czochralski-grown (CZ) and floating zone (FZ), as well as wafers containing crystal-originated particles (COPs) of different size and density. Lightly boron doped CZ wafers covered with an epitaxial ...

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