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Vibrational relaxation rates for H on a Si(100):(2×1) surface: a two-dimensional model

Andrianov, I. ; Saalfrank, P.



Zusammenfassung

The results of calculations based on perturbation theory of vibrational relaxation rates due to coupling to substrate phonons for hydrogen atoms adsorbed on a Si(1 0 0):(2 x 1) surface are presented. For this purpose a two-dimensional model is adopted in which both the H-Si stretching and bending motions are included. It is shown that within this model the multiphonon emission and absorption ...

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