Zusammenfassung
Magnetic tunnel junctions in the sub-micrometre range have been patterned by electron beam lithography. The hard reference electrode is composed of an artificial antiferromagnetic subsystem while the soft magnetic detection layer is Permalloy (NiFe). The magnetic switching characteristic is studied for various seed layers. For a polycrystalline iron seed line the magnetoresistance switching curve ...
Zusammenfassung
Magnetic tunnel junctions in the sub-micrometre range have been patterned by electron beam lithography. The hard reference electrode is composed of an artificial antiferromagnetic subsystem while the soft magnetic detection layer is Permalloy (NiFe). The magnetic switching characteristic is studied for various seed layers. For a polycrystalline iron seed line the magnetoresistance switching curve is irregular and not well behaved, while for a nonmagnetic seed layer (Ru) the reproducibility is good and the switching can be related to the shape of the element. We discuss possible coupling mechanisms and show that the magnetization reversal of the soft layer is mainly driven by the large stray fields of moving Neel-type domain walls in the Fe seed layer.
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