Abstract
We investigate from first principles the effect of substitutional disorder on the off-resonance Raman activity of GaSb/AlSb superlattices (SLs) including strain and mixing effects. The method we use is based on a perturbation scheme which allows to take into account both the actual chemical configuration and local displacements from a given reference (virtual) system. We calculate the first-order ...
Abstract
We investigate from first principles the effect of substitutional disorder on the off-resonance Raman activity of GaSb/AlSb superlattices (SLs) including strain and mixing effects. The method we use is based on a perturbation scheme which allows to take into account both the actual chemical configuration and local displacements from a given reference (virtual) system. We calculate the first-order Raman spectra of different (GaSb)(n)(AlSb)(n) superlattices grow:n in the [0 0 1] direction. The investigation of the effects of the interface modes on the Raman spectra allows the correct interpretation of the features found in the experiment. (C) 2001 Elsevier Science B.V. All rights reserved.
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