Excitonic signatures of ferroelectric order in parallel-stacked MoS2

URN to cite this document:: urn:nbn:de:bvb:355-epub-763911
DOI to cite this document:: 10.5283/epub.76391

Deb, Swarup ; Krause, Johannes ; Faria Junior, Paulo E.

; Kempf, Michael Andreas ; Schwartz, Rico ; Watanabe, Kenji

; Taniguchi, Takashi ; Fabian, Jaroslav

; Korn, Tobias

License: Creative Commons Attribution 4.0
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Date of publication of this fulltext: 20 Mar 2025 08:18

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Abstract

Interfacial ferroelectricity, prevalent in various parallel-stacked layered materials, allows switching of out-of-plane ferroelectric order by in-plane sliding of adjacent layers. Its resilience against doping potentially enables next-generation storage and logic devices. However, studies have been limited to indirect sensing or visualization of ferroelectricity. For transition metal ...