Abstract
Mn modulation-doped strain relaxed In0.75Ga0.25As/In0.75Al0.25As single quantum-well (SQW) structures on (0 0 1) GaAs with an embedded InAs channel are fabricated by molecular beam epitaxy. The properties of the magnetic two-dimensional hole system were investigated by magnetotransport measurements up to 19 T in the temperature range from 50mK to room temperature. In the lowtemperature ...
Abstract
Mn modulation-doped strain relaxed In0.75Ga0.25As/In0.75Al0.25As single quantum-well (SQW) structures on (0 0 1) GaAs with an embedded InAs channel are fabricated by molecular beam epitaxy. The properties of the magnetic two-dimensional hole system were investigated by magnetotransport measurements up to 19 T in the temperature range from 50mK to room temperature. In the lowtemperature regime typical features of the quantum Hall effect like quantized plateaus at the Hall resistance and Shubnikov-de Haas oscillations in the longitudinal resistance are observable. The resistance at B ¼ 0T shows a distinct temperature dependence, and at low temperatures, a large negative magnetoresistance. Furthermore, a hysteretic behavior and jumps in the resistance below 300mK and around B ¼ 0T can be observed for an asymmetric QW structure.
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