Weiss, Dieter, Mosser, V., Gudmundsson, V., Gerhardts, R. und Klitzing, Klaus von
Magnetic Field Dependence of Gate Voltage and Current in a GaAs-Heterostructure in the Quantum Hall Regime.
Solid State Communication 62 (2), S. 89-91.
Zum Artikel beim Verlag (über DOI)
The current flow at a fixed gate voltage and the floating gate voltage for fixed charge density in a gated GaAs heterostructure have been measured as a function of the magnetic field. The voltage oscillations which reflect the behaviour of the chemical potential have been clearly resolved. The experimental results are explained by a statistical model of inhomogeneities in the carrier concentration implying an effective density of states between the Landau levels.
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