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Magnetic Field Dependence of Gate Voltage and Current in a GaAs-Heterostructure in the Quantum Hall Regime

Weiss, Dieter, Mosser, V., Gudmundsson, V., Gerhardts, R. and Klitzing, Klaus von (1987) Magnetic Field Dependence of Gate Voltage and Current in a GaAs-Heterostructure in the Quantum Hall Regime. Solid State Communication 62 (2), pp. 89-91.

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Abstract

The current flow at a fixed gate voltage and the floating gate voltage for fixed charge density in a gated GaAs heterostructure have been measured as a function of the magnetic field. The voltage oscillations which reflect the behaviour of the chemical potential have been clearly resolved. The experimental results are explained by a statistical model of inhomogeneities in the carrier concentration implying an effective density of states between the Landau levels.


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Item type:Article
Date:1987
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Identification Number:
ValueType
10.1016/0038-1098(87)91118-5DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:7852
Owner only: item control page

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