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Magnetic Field Dependence of Gate Voltage and Current in a GaAs-Heterostructure in the Quantum Hall Regime

URN to cite this document:
urn:nbn:de:bvb:355-epub-78527
Weiss, Dieter ; Mosser, V. ; Gudmundsson, V. ; Gerhardts, R. ; Klitzing, Klaus von
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Date of publication of this fulltext: 05 Aug 2009 13:57


Abstract

The current flow at a fixed gate voltage and the floating gate voltage for fixed charge density in a gated GaAs heterostructure have been measured as a function of the magnetic field. The voltage oscillations which reflect the behaviour of the chemical potential have been clearly resolved. The experimental results are explained by a statistical model of inhomogeneities in the carrier concentration implying an effective density of states between the Landau levels.


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