| PDF (465kB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-78530
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.7853
Zusammenfassung
A 2D electron gas (2DEG) with a controlled density of repulsive scatters at the interface is obtained by irradiation of AlGaAs/GaAs heterojunctions with 1 MeV electrons. Measurements of the magnetotransport yield that the plateaus in the Hall resistance are at their quantized values Rxy = h/e2v (v is the integer filling factor) but show a significant broadening. The lineposition of the ...
Nur für Besitzer und Autoren: Kontrollseite des Eintrags
Downloadstatistik