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Fabrication and Characterization of Deep Mesa Echted "Anti"-dot Superlattices in GaAs-AlGaAs Heterostructures

URN to cite this document:
Weiss, Dieter ; Grambow, P. ; Klitzing, Klaus von ; Menschig, A. ; Weimann, G.
Date of publication of this fulltext: 05 Aug 2009 13:57


By etching a periodic array of holes through a ;mobility two-dimensional electron gas we define high-a lateral, ``anti\'\'-dot-type superlattice with periods a=200 and a=300 nm, much smaller than the electron mean free path in the unpatterned material. The devices are fabricated using electron beam lithography and reactive ion etching techniques, and characterized by magnetotransport ...


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