Go to content
UR Home

Quasi one-dimensional single AlGaAs/GaAs Hall bar quantum wires grown in patterned substrates

Shitara, T. ; Tornow, M. ; Kurtenbach, A. ; Weiss, Dieter ; Eberl, K. ; Klitzing, K.


Hall bars with widths down to about 250 nm were prepared by overgrowth on patterned GaAs (001) substrates using molecular beam epitaxy. This fabrication method generates a lateral confinement potential determined by AlGaAs barriers. The four-terminal magnetoresistance of a single wire, measured at 1.3 K after illumination, displays the well-known features of quasi-one-dimensional electron ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons