Abstract
Hall bars with widths down to about 250 nm were prepared by overgrowth on patterned GaAs (001) substrates using molecular beam epitaxy. This fabrication method generates a lateral confinement potential determined by AlGaAs barriers. The four-terminal magnetoresistance of a single wire, measured at 1.3 K after illumination, displays the well-known features of quasi-one-dimensional electron ...
Abstract
Hall bars with widths down to about 250 nm were prepared by overgrowth on patterned GaAs (001) substrates using molecular beam epitaxy. This fabrication method generates a lateral confinement potential determined by AlGaAs barriers. The four-terminal magnetoresistance of a single wire, measured at 1.3 K after illumination, displays the well-known features of quasi-one-dimensional electron systems. We estimate the electron mobility in a 
250 nm wide wire to be larger than 51 000 cm2/V s at a carrier concentration of 3.3 × 1011 cm � 2.This mobility is comparable to the one measured in a wide reference sample fabricated under identical conditions. ©1995 American Institute of Physics.
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