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Quasi one-dimensional single AlGaAs/GaAs Hall bar quantum wires grown in patterned substrates

Shitara, T ; Tornow, M ; Kurtenbach, A ; Weiss, Dieter ; Eberl, K ; Klitzing, K


Hall bars with widths down to about 250 nm were prepared by overgrowth on patterned GaAs (001) substrates using molecular beam epitaxy. This fabrication method generates a lateral confinement potential determined by AlGaAs barriers. The four-terminal magnetoresistance of a single wire, measured at 1.3 K after illumination, displays the well-known features of quasi-one-dimensional electron ...


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