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Growth of (Ga,Mn)As on GaAs(001) and (311)A in a high-mobility MBE system

Reinwald, M, Wurstbauer, Ursula, Döppe, Matthias, Kipferl, W, Wagenhuber, Klaus, Tranitz, H, Weiss, Dieter and Wegscheider, Werner (2005) Growth of (Ga,Mn)As on GaAs(001) and (311)A in a high-mobility MBE system. Journal of Crystal Growth 278, p. 690.

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Other URL: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TJ6-4FG89BW-1-1&_cdi=5302&_user=616165&_orig=search&_coverDate=05%2F01%2F2005&_sk=997219998&view=c&wchp=dGLzVtz-zSkzk&md5=dad0e5b4d55ab608bf8cf33d9bd9f46d&ie=/sdarticle.pdf, http://www.sciencedirect.com/science/journal/00220248


We demonstrate the possibility to produce both GaAs/AlGaAs heterostructures with high electron mobilities and (Ga,Mn)As by molecular beam epitaxy (MBE) in the same growth chamber. The (Ga,Mn)As samples have been grown on (0 0 1) and (3 1 1)A GaAs substrates and show state of the art quality. Immediately after (Ga,Mn)As growth, two-dimensional electron systems have been produced which ...


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Item type:Article
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:7926
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