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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-83524
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.8352
Zusammenfassung
We report on the observation of the circular photogalvanic effect in Si-metal-oxide-semiconductor fieldeffect transistors with inversion channel excited by terahertz radiation. We demonstrate that in spite of the fact that the photocurrent is caused by transfer of the photon angular momentum to free carriers, it is not due to spin orientation but has a pure orbital origin. It results from the ...
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