Observation of orbital circular photogalvanic effect

URN to cite this document:: urn:nbn:de:bvb:355-epub-83524
DOI to cite this document:: 10.5283/epub.8352

Olbrich, Peter ; Tarasenko, Sergey ; Reitmaier, C. ; Karch, J. ; Plohmann, Daniel ; Kvon, Z. D. ; Ganichev, Sergey

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Date of publication of this fulltext: 05 Aug 2009 13:59

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Abstract

We report on the observation of the circular photogalvanic effect in Si-metal-oxide-semiconductor fieldeffect transistors with inversion channel excited by terahertz radiation. We demonstrate that in spite of the fact that the photocurrent is caused by transfer of the photon angular momentum to free carriers, it is not due to spin orientation but has a pure orbital origin. It results from the ...