Go to content
UR Home

Observation of orbital circular photogalvanic effect

URN to cite this document:
Olbrich, Peter ; Tarasenko, Sergey ; Reitmaier, C. ; Karch, J. ; Plohmann, Daniel ; Kvon, Z. D. ; Ganichev, Sergey
Date of publication of this fulltext: 05 Aug 2009 13:59


We report on the observation of the circular photogalvanic effect in Si-metal-oxide-semiconductor fieldeffect transistors with inversion channel excited by terahertz radiation. We demonstrate that in spite of the fact that the photocurrent is caused by transfer of the photon angular momentum to free carriers, it is not due to spin orientation but has a pure orbital origin. It results from the ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons