Orbital effects of tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions

URN to cite this document:: urn:nbn:de:bvb:355-epub-89686
DOI to cite this document:: 10.5283/epub.8968

Wimmer, Michael ; Lobenhofer, M. ; Moser, Jürgen ; Matos-Abiague, Alex ; Schuh, Dieter ; Wegscheider, Werner ; Fabian, Jaroslav

; Richter, Klaus ; Weiss, Dieter

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Date of publication of this fulltext: 06 Aug 2009 12:01

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Abstract

We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with ...