Orbital effects of tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions

URN to cite this document:: urn:nbn:de:bvb:355-epub-89686
DOI to cite this document:: 10.5283/epub.8968

Wimmer, Michael

; Lobenhofer, M. ; Moser, Jürgen ; Matos-Abiague, Alex ; Schuh, Dieter ; Wegscheider, Werner ; Fabian, Jaroslav

; Richter, Klaus ; Weiss, Dieter

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Date of publication of this fulltext: 06 Aug 2009 12:01

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Abstract

We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the magnitude of the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by magnetic field strength. Theoretical modeling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to ...