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- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.9571
Zusammenfassung
We theoretically investigate the resonant Raman scattering of GaAs quantum dots. The electron system is treated within the time-dependent local-density approximation and the cross section is calculated by including valence-band states as intermediate states in the scattering process. We show that, besides the strongly collective charge-density excitations and spin-density excitations, which ...
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