Hole-intersubband excitations and luminescence transitions in p-doped GaAs---AlGaAs multiple quantum wells

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.9651

Dahl, M. ; Ils, P. ; Kraus, J. ; Müller, B. ; Schaack, G. ; Schüller, Christian ; Ebeling, J. K. ; Weimann, G.

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Veröffentlichungsdatum dieses Volltextes: 02 Okt 2009 09:20

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Zusammenfassung

We have performed resonant Raman spectroscopy on two p-type modulation-doped GaAs---AlGaAs multiple quantum well structures with well widths dW = 10 nm and dW = 30 nm. With the frequency of the dyelaser nearly in resonance with the energy difference between conduction and valence band states of the same subband quantum number n we simultaneously observe Raman intensity of hole intersubband ...