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Hole-intersubband excitations and luminescence transitions in p-doped GaAs---AlGaAs multiple quantum wells

Dahl, M., Ils, P., Kraus, J., Müller, B., Schaack, G., Schüller, Christian, Ebeling, J. K. and Weimann, G. (1991) Hole-intersubband excitations and luminescence transitions in p-doped GaAs---AlGaAs multiple quantum wells. Superlattices and Microstructures 9 (1), pp. 77-81.

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Abstract

We have performed resonant Raman spectroscopy on two p-type modulation-doped GaAs---AlGaAs multiple quantum well structures with well widths dW = 10 nm and dW = 30 nm. With the frequency of the dyelaser nearly in resonance with the energy difference between conduction and valence band states of the same subband quantum number n we simultaneously observe Raman intensity of hole intersubband ...

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Item type:Article
Date:1991
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller
Identification Number:
ValueType
10.1016/0749-6036(91)90096-ADOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:9651
Owner only: item control page

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