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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-97207
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.9720
Zusammenfassung
We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature-dependent measurements down to the millikelvin range we compare the models currently used to describe transport through (Ga,Mn)As nanoconstrictions. We provide an explanation ...
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