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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-98175
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.9817
Zusammenfassung
We report here on anisotropy of spin polarization obtained in lateral all-semiconductor, all-electrical spin injection devices employing p+-(Ga,Mn)As/n+-GaAs Esaki diode structures as spin aligning contacts, resulting from the dependence of the efficiency of spin tunneling on the orientation of spins with respect to different crystallographic directions. We observed an in-plane anisotropy of 8% ...
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