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Silicon/Germanium Strained-Layer Superlattices

Abstreiter, Gerhard ; Eberl, Karl ; Friess, E. ; Wegscheider, Werner ; Zachai, R.


High quality Si/Ge strained layer superlattices are achieved by low temperature molecular beam epitaxy on Si, SixGe1−x and Ge substrates. Various characterization techniques are used to obtain information on critical thickness, strain distribution, misfit dislocations, interface sharpness and superlattice periodicity. The band structure is strongly influenced by strain and zone folding effects. ...


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