Transmission electron microscopy of short-period Si/Ge strained-layer superlattices on Ge substrates

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.9977

Wegscheider, Werner ; Eberl, Karl ; Cerva, H. ; Oppolzer, H.

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Veröffentlichungsdatum dieses Volltextes: 26 Okt 2009 13:08

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Structural investigations of high quality Si/Ge strained-layer superlattices (SLSs) on [001] oriented Ge substrates prepared by molecular beam epitaxy are presented. Cross-sectional transmission electron microscopy reveals that a defect-free superlattice is achieved for a structure composed of a 20-period sequence of 3 monolayers (ML) Si and 9 ML Ge. High-resolution lattice images and electron ...