Novel relaxation process in strained Si/Ge superlattices grown on Ge (001)

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.9980

Wegscheider, Werner ; Eberl, Karl ; Abstreiter, Gerhard ; Cerva, H. ; Oppolzer, H.

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Veröffentlichungsdatum dieses Volltextes: 26 Okt 2009 13:22

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A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge strained-layer superlattices grown by molecular beam epitaxy on Ge(001). In order to investigate the transition from coherent to incoherent growth we have studied a set of samples with a varying number of superlattice periods by transmission electron microscopy. High-resolution lattice imaging reveals ...