Infrared optical properties and band structure of α-Sn/Ge superlattices on Ge substrates

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.9984

Olajos, Janos ; Vogl, P. ; Wegscheider, Werner ; Abstreiter, Gerhard

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Veröffentlichungsdatum dieses Volltextes: 26 Okt 2009 13:30

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Zusammenfassung

Short-period α-Sn/Ge strained-layer superlattices have been prepared on [001] Ge substrates by low-temperature molecular-beam epitaxy. We have achieved almost-defect-free and thermally stable single-crystalline structures. Photocurrent measurements in a series of Sn1Gem (m>10) superlattices reveal a shift of the fundamental energy gap to smaller energies with decreasing Ge layer thickness m, in ...