Fabrication and properties of epitaxially stabilized Ge / α-Sn heterostructures on Ge(001)

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.9989

Wegscheider, Werner ; Olajos, Janos ; Menczigar, U. ; Dondl, W. ; Abstreiter, Gerhard

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Veröffentlichungsdatum dieses Volltextes: 26 Okt 2009 13:53

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We have investigated the influence of the growth parameters during molecular beam epitaxy on the realizibility of diamond crystal structure Ge / α-Sn alloys and superlattices on Ge(001) substrates. The segregation behaviour of Sn during Ge overgrowth has been studied. We find that for growth temperatures higher than 300°C the incorporation rates are less than 0.005 ML-1. The low-energy electron ...