Anzahl der Einträge: 4.
2004
Shalygin, Vadim,
Vorobjev, L.,
Firsov, D.,
Towe, E.,
Murdin, B.,
Phillips, P.,
Pidgeon, C.,
Cardes, D.,
Gurevich, S.,
Danilov, Sergey,
Ganichev, Sergey und
Prettl, Wilhelm
(2004)
Photogalvanic effects under terahertz excitation in tunnel-coupled quantum wells.
In: 12th International Symposium on Ultrafast Phenomena in Semiconductors, 22. - 25. August 2004, Vilnius, LITHUANIA.
Volltext nicht vorhanden.
Shalygin, Vadim,
Vorobjev, L.,
Firsov, D.,
Towe, E.,
Gurevich, S.,
Danilov, Sergey und
Ganichev, Sergey
(2004)
Terahertz radiation induced intersubband transitions and photogalvanic effects in tunnel-coupled quantum wells.
Proc. 12th Internatonal Symposium Nanostructures: Physics and Technology, St. Petersburg, Russia.
Volltext nicht vorhanden.
Shalygin, Vadim,
Vorobjev, L.,
Firsov, D.,
Towe, E.,
Gurevich, S. und
Danilov, Sergey
(2004)
Terahertz radiation induced intersubband transitions and photogalvanic effects in tunnel-coupled quantum wells.
In: 12th International Symposium Nanostructures: Physics and Technology,, 21. – 25. Juni 2004, St. Petersburg, Russia.
Volltext nicht vorhanden.
1995
Kotel'nikov, I.,
Shul'man, A.,
Mordovets, N.,
Varvanin, N.,
Ganichev, Sergey,
Mayerhofer, B. und
Prettl, Wilhelm
(1995)
Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs.
In:
Towe, E., (ed.)
Proceedings / 1995 International Semiconductor Device Research Symposium, December 5 - 8, 1995, Band 1.
Engineering Academic Outreach, University of Virginia, Charlottesville, Va., S. 99.
ISBN 1-88092-003-4.
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