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Density dependent cyclotron and intersubband resonance in inverted CdTe/HgTe/CdTe quantum wells.

Schultz, M. and Merkt, U. and Sonntag, A. and Rössler, Ulrich and Colin, T. and Helgesen, P. and Skauli, T. and Lovold, S. (1998) Density dependent cyclotron and intersubband resonance in inverted CdTe/HgTe/CdTe quantum wells. Journal of Crystal Growth 184-18, pp. 1180-1184.

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Cyclotron and intersubband resonances in HgTe quantum wells in the inverted band regime are studied by Fourier-transform spectroscopy. Metal-oxide-semiconductor field-effect transistors (MOSFETs) allow us to tune the electron density. In particular, we investigate filling factor dependent splittings of the cyclotron resonance in strong magnetic fields and a crossing of Landau levels of the conduction and valence subband. The experimental results are well described by a 6 × 6 k·p-model.

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Item type:Article
Date:2 February 1998
Institutions:Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Ulrich Rössler
Identification Number:
Keywords:HgTe; CdTe; Quantum well; Two-dimensional electron system; Cyclotron resonance; Intersubband resonance
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited on:20 Mar 2007
Last modified:13 Mar 2014 09:53
Item ID:1383
Owner only: item control page


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