Schliemann, John (2006) Spin Hall Effect. Int. J. of Mod. Phys. B 20, p. 1015.
The intrinsic spin Hall effect in semiconductors has developed to a remarkably lively and rapidly growing branch of research in the field of semiconductor spintronics. In this article we give a pedagogical overview on both theoretical and experimental accomplishments and challenges. Emphasis is put on the the description of the intrinsic mechanisms of spin Hall transport in III-V zinc-blende semiconductors, and on the effects of dissipation.
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|Institutions:||Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group John Schliemann|
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited on:||20 Mar 2007|
|Last modified:||13 Mar 2014 10:04|