Local strain and potential distribution induced by single dislocations in GaN

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11977

Gmeinwieser, Nikolaus ; Gottfriedsen, P. ; Schwarz, Ulrich ; Wegscheider, Werner ; Clos, R. ; Krtschil, A. ; Krost, A. ; Weimar, Andreas ; Brüderl, G. ; Lell, Alfred ; Härle, Volker

PDF
(328kB) - Nur für Mitarbeiter des Archivs

Veröffentlichungsdatum dieses Volltextes: 25 Jan 2010 13:03

Alternative Links zum Volltext:DOI

Details

Bibliographische Daten exportieren

Zusammenfassung

The presence of a threading edge dislocation terminated at the surface of GaN bulk substrates causes a dipole-like strain state ranging over a several micrometer square area. The local strain state is derived from microphotoluminescence mappings of the near-band-edge spectrum and is quantitatively reproduced by a three-dimensional elastic deformation model approach. These results are compared ...