Microscopic analysis of optical gain in InGaN/GaN quantum wells

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.12177

Witzigmann, B. ; Laino, V. ; Luisier, M. ; Schwarz, Ulrich ; Feicht, Georg ; Wegscheider, Werner ; Engl, Karl ; Furitsch, Michael ; Leber, Andreas ; Lell, Alfred ; Härle, Volker

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Veröffentlichungsdatum dieses Volltextes: 25 Jan 2010 13:07

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Zusammenfassung

A microscopic theory is used to analyze optical gain in InGaN/GaN quantum wells (QW). Experimental data are obtained from Hakki–Paoli measurements on edge-emitting lasers for different carrier densities. The simulations are based on the solution of the quantum kinetic Maxwell–Bloch equations, including many-body effects and a self-consistent treatment of piezoelectric fields. The results confirm ...