Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.12183

Engl, Karl ; Beer, Martin ; Gmeinwieser, Nikolaus ; Schwarz, Ulrich ; Zweck, Josef ; Wegscheider, Werner ; Miller, Stephan ; Miler, A. ; Lugauer, H.-J. ; Brüderl, G. ; Lell, Alfred ; Härle, Volker

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Veröffentlichungsdatum dieses Volltextes: 25 Jan 2010 13:12

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In this work we present a study on the influence of an in situ grown SiNx intermediate layer inside (Al)GaN epitaxial layers grown on SiC substrates on dislocation densities and material strain of the epitaxial films. A defect density of View the MathML source was achieved by reducing the number of pure edge dislocations in the order of one magnitude. It was found that a reduction of the ...