Evidence and evaluation of the Bychkov-Rashba effect in SiGe/Si/SiGe quantum wells

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.1347

Wilamowski, Zbyslaw ; Jantsch, Wolfgang ; Malissa, Hans ; Rössler, Ulrich

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Veröffentlichungsdatum dieses Volltextes: 05 Aug 2009 13:28

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From spin resonance of two-dimensional (2D) conduction electrons in a modulation doped SiGe/Si/SiGe quantum well structure we find a 2D anisotropy of both the line broadening (dephasing time) and the g factor. Both can be explained consistently employing the Bychkov-Rashba (BR) term H_BR = alpha(k×sigma)·ez, which turns out here to be the dominant coupling between electron orbital motion and ...