Zusammenfassung
We report an extensive study of the magnetotransport properties of magnetically doped two-dimensional hole systems. Inverted manganese modulation doped InAs quantum wells with localized manganese ions providing a magnetic moment of S = 5/2 were grown by molecular beam epitaxy. Strong localization effect found in low-field magnetotransport measurements on these structures can either be modified by ...
Nur für Besitzer und Autoren: Kontrollseite des Eintrags
Altmetric