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- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.1376
Zusammenfassung
We report quantitative experimental and theoretical results revealing the tunability of spin splitting in high-mobility two-dimensional GaAs hole systems, confined to either a square or a triangular quantum well, via the application of a surface-gate bias. The spin splitting depends on both the hole density and the symmetry of the confinement potential and is largest for the highest densities in ...
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