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Global band structure and near-band edge states

Wellenhofer, G. and Rössler, Ulrich (1997) Global band structure and near-band edge states. Physica Status Solidi (B) 202 (1), pp. 107-123.

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Date of publication of this fulltext: 05 Aug 2009 13:28

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Other URL: http://www3.interscience.wiley.com/cgi-bin/abstract/88012550/ABSTRACT


The global band structure from ab-initio calculations using DFT-LDA concepts is presented and discussed for 2H, 3C, 4H, 6H, and 15R SiC in view of the different stacking sequences and point lattices of these polytypes. Details of the conduction and valence band structure close to the band edges are described by using {\bf k·p} models and thermal density-of-states effective masses are calculated.

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Item type:Article
Institutions:Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Ulrich Rössler
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Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:1393
Owner only: item control page


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