Global band structure and near-band edge states

Abstract

The global band structure from ab-initio calculations using DFT-LDA concepts is presented and discussed for 2H, 3C, 4H, 6H, and 15R SiC in view of the different stacking sequences and point lattices of these polytypes. Details of the conduction and valence band structure close to the band edges are described by using { k·p} models and thermal density-of-states effective masses are calculated.