Go to content
UR Home

Spin Hall Effect

URN to cite this document:
urn:nbn:de:bvb:355-epub-17885
DOI to cite this document:
10.5283/epub.1788
Schliemann, John
[img]
Preview
PDF
(198kB)
Date of publication of this fulltext: 05 Aug 2009 13:32



Abstract

The intrinsic spin Hall effect in semiconductors has developed to a remarkably lively and rapidly growing branch of research in the field of semiconductor spintronics. In this article we give a pedagogical overview on both theoretical and experimental accomplishments and challenges. Emphasis is put on the the description of the intrinsic mechanisms of spin Hall transport in III-V zinc-blende semiconductors, and on the effects of dissipation.


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons