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- URN to cite this document:
- urn:nbn:de:bvb:355-epub-17885
- DOI to cite this document:
- 10.5283/epub.1788
Abstract
The intrinsic spin Hall effect in semiconductors has developed to a remarkably lively and rapidly growing branch of research in the field of semiconductor spintronics. In this article we give a pedagogical overview on both theoretical and experimental accomplishments and challenges. Emphasis is put on the the description of the intrinsic mechanisms of spin Hall transport in III-V zinc-blende semiconductors, and on the effects of dissipation.
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