URN zum Zitieren dieses Dokuments: urn:nbn:de:bvb:355-epub-17885
Spin Hall Effect.
Int. J. of Mod. Phys. B 20, S. 1015.
Zum arXiv-Eintrag dieses Artikels
The intrinsic spin Hall effect in semiconductors has developed to a remarkably lively and rapidly growing branch of research in the field of semiconductor spintronics. In this article we give a pedagogical overview on both theoretical and experimental accomplishments and challenges. Emphasis is put on the the description of the intrinsic mechanisms of spin Hall transport in III-V zinc-blende semiconductors, and on the effects of dissipation.
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