Theoretical study of interacting hole gas in p-doped bulk III-V semiconductors

URN zum Zitieren dieses Dokuments:: urn:nbn:de:bvb:355-epub-17891
DOI zum Zitieren dieses Dokuments:: 10.5283/epub.1789

Schliemann, John

Vorschau

PDF
(203kB)

Veröffentlichungsdatum dieses Volltextes: 05 Aug 2009 13:32

Alternative Links zum Volltext:DOI Arxiv Verlag

Details

Vorschau

Bibliographische Daten exportieren

Zusammenfassung

We study the homogeneous interacting hole gas in $p$-doped bulk III-V semiconductors. The structure of the valence band is modelled by Luttinger's Hamiltonian in the spherical approximation, giving rise to heavy and light hole dispersion branches, and the Coulomb repulsion is taken into account via a self-consistent Hartree-Fock treatment. As a nontrivial feature of the model, the self-consistent ...