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Influence of an in situ-deposited SiN_x intermediate layer inside GaN and AlGaN layers on SiC substrates

Engl, Karl, Beer, Martin, Gmeinwieser, Nikolaus, Schwarz, Ulrich, Zweck, Josef, Wegscheider, Werner, Miller, S., Miler, A., Lugauer, H., Brüderl, G., Lell, A. and Härle, V. (2006) Influence of an in situ-deposited SiN_x intermediate layer inside GaN and AlGaN layers on SiC substrates. Journal of Crystal Growth 289 (1), pp. 6-13.

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In this work we present a study on the influence of an in situ grown SiNx intermediate layer inside (Al)GaN epitaxial layers grown on SiC substrates on dislocation densities and material strain of the epitaxial films. A defect density of was achieved by reducing the number of pure edge dislocations in the order of one magnitude. It was found that a reduction of the dislocation density is only ...


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Item type:Article
Date:March 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Ulrich Schwarz
Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck
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Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:1804
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