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Influence of an in situ-deposited SiN_x intermediate layer inside GaN and AlGaN layers on SiC substrates

DOI to cite this document:
10.5283/epub.1804
Engl, Karl ; Beer, Martin ; Gmeinwieser, Nikolaus ; Schwarz, Ulrich ; Zweck, Josef ; Wegscheider, Werner ; Miller, S. ; Miler, A. ; Lugauer, H. ; Brüderl, G. ; Lell, A. ; Härle, V.
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Date of publication of this fulltext: 05 Aug 2009 13:33


Abstract

In this work we present a study on the influence of an in situ grown SiNx intermediate layer inside (Al)GaN epitaxial layers grown on SiC substrates on dislocation densities and material strain of the epitaxial films. A defect density of was achieved by reducing the number of pure edge dislocations in the order of one magnitude. It was found that a reduction of the dislocation density is only ...

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