Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.1811

Gareev, Rashid ; Bugoslavsky, Y. ; Schreiber, R. ; Paul, A. ; Sperl, Matthias ; Döppe, Matthias

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Veröffentlichungsdatum dieses Volltextes: 05 Aug 2009 13:33

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Zusammenfassung

We report on the carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor insulating-type thin-film structures prepared using sequential deposition at Tg=520 K with subsequent annealing at Tg. In the resulting films Mn and Fe are diffused in the Ge matrix without compromising the epitaxial structure. The anomalous Hall effect serves as a manifestation of the carrier-induced ...